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‘Coulomb staircase’ in a Si/Ge structure

✍ Scribed by Yakimov, A. I.; Markov, V. A.; Dwrechenskii, A. V.; Pchelyakov, O. P.


Book ID
120430274
Publisher
Taylor and Francis Group
Year
1992
Tongue
English
Weight
255 KB
Volume
65
Category
Article
ISSN
1364-2812

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Ni-mediated low-temperature solid-phase crystallization in a-Ge/a-Si/SiO 2 layered structure has been investigated. Crystal nucleation was initiated in the a-Ge layer, which stimulated the bond rearrangement in a-Si. This enhanced lateral crystallization velocity of a-Si three times greater than tha