✦ LIBER ✦

Engineering and impact of surface states on AlGaN/GaN-based hetero field effect transistors

✍ Scribed by Mistele, D; Katz, O; Horn, A; Bahir, G; Salzman, J

Book ID: 120388365
Publisher: Institute of Physics
Year: 2005
Tongue: English
Weight: 233 KB
Volume: 20
Category: Article
ISSN: 0268-1242
DOI: 10.1088/0268-1242/20/9/015

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High transconductance heterostructure fi

High transconductance heterostructure field‐effect transistors based on AlGaN/GaN

✍ Chen, Q.; Asif Khan, M.; Yang, J. W.; Sun, C. J.; Shur, M. S.; Park, H. 📂 Article 📅 1996 🏛 American Institute of Physics 🌐 English ⚖ 468 KB

Field-effect transistors based on AlGaN/

Field-effect transistors based on AlGaN/GaN/AlGaN double-heterostructures grown by MBE

✍ S. B. Aleksandrov; D. A. Baranov; V. P. Chaly; D. M. Krasovitsky; M. V. Pavlenko 📂 Article 📅 2005 🏛 John Wiley and Sons 🌐 English ⚖ 178 KB

Polarization effects, surface states, an

Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

✍ Ibbetson, J. P.; Fini, P. T.; Ness, K. D.; DenBaars, S. P.; Speck, J. S.; Mishra 📂 Article 📅 2000 🏛 American Institute of Physics 🌐 English ⚖ 348 KB

Material growth and device characterizat

Material growth and device characterization of AlGaN/GaN single-heterostructure and AlGaN/GaN/AlGaN double-heterostructure field effect transistors on Si substrates

✍ Hsiao, Yu-Lin; Chang, Chia-Ao; Chang, Edward Yi; Maa, Jer-Shen; Chang, Chia-Ta; 📂 Article 📅 2014 🏛 Institute of Pure and Applied Physics 🌐 English ⚖ 981 KB

Impact of dopants in GaN on the formatio

Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

✍ R.M. Chu; Y.D. Zheng; Y.G. Zhou; P. Han; B. Shen; S.L. Gu 📂 Article 📅 2002 🏛 Springer 🌐 English ⚖ 313 KB

Effect of buffer thickness on DC and mic

Effect of buffer thickness on DC and microwave performance of AlGaN/GaN heterojunction field-effect transistors

✍ Chevtchenko, Serguei A. ;Brunner, Frank ;Würfl, Joachim ;Tränkle, Günther 📂 Article 📅 2010 🏛 John Wiley and Sons 🌐 English ⚖ 320 KB

## Abstract The authors compared DC and microwave performance of AlGaN/GaN heterojunction field‐effect transistors (HFETs) fabricated on epitaxial structures with different thickness of GaN buffer layer. The structures were grown by low‐pressure metal‐organic vapour phase epitaxy on semi‐insulating