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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

✍ Scribed by Ibbetson, J. P.; Fini, P. T.; Ness, K. D.; DenBaars, S. P.; Speck, J. S.; Mishra, U. K.

No coin nor oath required. For personal study only.

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