Emission properties of Ti-DLC films prepared by unbalanced magnetron sputtering

✍ Scribed by H.F. Liang; Z.H. Liang; C.L. Liu; L.G. Meng

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 565 KB
• Volume: 256
• Category: Article
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2009.10.043

✦ Synopsis

The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm 2 could be obtained at an applied field of 33 V/mm and the threshold field was 24 V/mm for the coplanar emission structure. The silicon substrate was found to limit the emission current in the diode structure because of its high resistivity.