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Field emission properties of nitrogen incorporated DLC films prepared by electrodeposition

โœ Scribed by R.S. Li; E.Q. Xie; M. Zhou; Z.X. Zhang; T. Wang; B.A. Lu

Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
299 KB
Volume
255
Category
Article
ISSN
0169-4332

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The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm 2 could be obtained at an applied field of 33 V/mm and the threshold field was 24 V/mm for the coplanar emission structure. The silicon substrate was found to