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Properties of films prepared by thermal coevaporation of Cr and Ti in nitrogen

✍ Scribed by Ch. Wirz; A. Blatter; R. Hauert

Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
517 KB
Volume
214
Category
Article
ISSN
0040-6090

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The field emission properties of Ti-DLC films in diode and coplanar device structures were studied. An emission current density of 1.14 A/cm 2 could be obtained at an applied field of 33 V/mm and the threshold field was 24 V/mm for the coplanar emission structure. The silicon substrate was found to