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Electron mobility in a modulation doped AlGaN/GaN quantum well

✍ Scribed by Z. Yarar; B. Ozdemir; M. Ozdemir

Book ID
111621767
Publisher
Springer
Year
2006
Tongue
English
Weight
357 KB
Volume
49
Category
Article
ISSN
1434-6036

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We have investigated electron Hall mobility of high-quality GaN/AlGaN multiple quantum wells (QWs). Electron mobility was enhanced from 875 to 1600 cm 2 /Vs at room temperature in GaN/Al 0.58 Ga 0.42 N QWs when the number of QWs increased from 1 to 10. Atomic force microscopy analysis shows that the

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We report on magnetoresistance measurements of two-dimensional electrons in AlAs quantum wells with mobilities up to 19 m 2 =V s. Fractional quantum Hall states at ΓΏrst-and second-order ΓΏlling factors, and up to = 11 3 , are observed. Shubnikovde Haas oscillations of high-density samples reveal that