Electron beam resists based on oxirane functionalised polystyrenes
β Scribed by J.J. Murphy; R.G. Jones; G. Cordina
- Book ID
- 104306325
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 266 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
Copolymers consisting of styrene and 4-ethenyl-phenyloxirane (epoxystyrene) can be synthesised by radical copolymerisation. The flexibility offered by this simple method of synthesis allows the production of a variety of copolymers. The possibility of altering the lithographic parameters by modification of the copolymer makes this method of production highly attractive for the purposes of lithographic optimisation. More so than for the analogous systems based upon epoxy novolak resins which suffer because a range of different polymers that, would allow a worthwhile structure/process optimisation, is not available.
π SIMILAR VOLUMES
The electron beam exposure characteristics of two new Shipley DUV photoresists, UVIII and UVN have been investigated. UVIII is a positive resist which gives good linewidth control down to 100 nm lines and spaces with 60 nm features being possible at a dose of 40 I.tC/cm 2 and a beam voltage of 50 kV