Electron beam lithography using plasma polymerized hexane as resist

✍ Scribed by R.H. Pedersen; M. Hamzah; S. Thoms; P. Roach; M.R. Alexander; N. Gadegaard

• Publisher: Elsevier Science
• Year: 2010
• Tongue: English
• Weight: 339 KB
• Volume: 87
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2009.11.043

✦ Synopsis

We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro-and nanopatterns are achieved with doses of 5000-25000 lC cm À2 . Resist polarity is negative and features with a linewidth down to 150 nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.