Electron beam lithography simulation for mask making
β Scribed by Chris A. Mack
- Publisher
- Elsevier Science
- Year
- 1999
- Tongue
- English
- Weight
- 589 KB
- Volume
- 46
- Category
- Article
- ISSN
- 0167-9317
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β¦ Synopsis
A new model called ProBEAM/3D is introduced for the simulation of electron beam lithography and applied to the problem of mask making. Monte Carlo simulations are combined with a beam shape to generate a single "pixel" energy distribution. This pixel is then used to write a pattern by controlling the dose of every pixel on an address grid. The resulting dose pattern is used to expose and develop a resist to form a simulated three-dimensional resist pattern.
π SIMILAR VOLUMES
A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named ELlS (Electron-beam Lithography Simulator) that can