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Electron-beam lithography resist profile simulation for highly sensitive resist

✍ Scribed by C. Lee; Y.M. Ham; S.H. Kim; K. Chun

Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
287 KB
Volume
35
Category
Article
ISSN
0167-9317

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✦ Synopsis

A very highly sensitive resist is difficult to simulate its resist profile because of its extreme difference of development rate which can be determined from absorbed energy when electron beam is exposed. We developed resist profile simulator named ELlS (Electron-beam Lithography Simulator) that can predict the development profile of a very highly sensitive resist: Hybrid scattering model, Gaussian beam convolution and its superposition were used for Monte Carlo simulation and the ray tracing model for resist development.

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