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Electron beam lithography — influence of molecular characteristics on the performance of positive resists

✍ Scribed by Sharma, Varinder K. ;Affrossman, Stanley ;Pethrick, Richard A.

Publisher
Wiley (John Wiley & Sons)
Year
1984
Tongue
English
Weight
393 KB
Volume
16
Category
Article
ISSN
0007-1641

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This study examined the ultimate fine-pitch patterning performance in EUV lithography (EUVL) of a chemically amplified (CA) positive-tone resist based on low-molecular-weight amorphous polyphenol. This advanced resist is composed of the low-molecular-weight protected polyphenol 4,4 0 -methylenebis[2