Performance of molecular resist based on polyphenol in EUV lithography

✍ Scribed by Hiroaki Oizumi; Fumiaki Kumasaka; Yuusuke Tanaka; Taku Hirayama; Daiju Shiono; Hideo Hada; Junichi Onodera; Atsuko Yamaguchi; Iwao Nishiyama

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 511 KB
• Volume: 83
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2006.01.025

✦ Synopsis

This study examined the ultimate fine-pitch patterning performance in EUV lithography (EUVL) of a chemically amplified (CA) positive-tone resist based on low-molecular-weight amorphous polyphenol. This advanced resist is composed of the low-molecular-weight protected polyphenol 4,4 0 -methylenebis[2-[di(2-mehtyl-4-hydroxy-5-alkyl)methyl]phenol (MBSA2), a photochemical acid generator (PAG), and a quencher. Imaging experiments were performed using the high-numerical-aperture (NA = 0.3), small-field EUV exposure tool (HINA) and coherent illumination (r = 0.0). Patterning results showed the resolution of the resist to be 30 nm at an EUV exposure dose of 10 mJ/cm 2 , and the line-edge roughness (LER) to be small, with 3r being 6.3 nm for 50 nm line-and-space patterns and an inspection length, L, of 2000 nm.