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Electron beam induced regrowth of ion implantation damage in Si and Ge

✍ Scribed by I. Jenčič; I.M. Robertson; J. Skvarč

Book ID
114170728
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
490 KB
Volume
148
Category
Article
ISSN
0168-583X

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Regrowth of heavy-ion implantation damag
Regrowth of heavy-ion implantation damage by electron beams
✍ I Jenčič; I.M Robertson 📂 Article 📅 2000 🏛 Elsevier Science 🌐 English ⚖ 521 KB

Electron transparent Si, Ge and GaP samples were implanted with 50 keV Xe + ions to a dose around 10 11 ions/cm 2 . At this implantation condition, each heavy ion created a small, spatially isolated amorphous zone. Following the ion implantation, the samples were irradiated with electrons having ene