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Electrical property of high-fluence metal ion implanted sapphire and its thermal annealing effects

✍ Scribed by Tomohiro Kobayashi; Takayuki Terai

Book ID
114170177
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
600 KB
Volume
141
Category
Article
ISSN
0168-583X

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Silicon capped by thermal oxide has been implanted with 1 β€’ 10 17 H/cm 2 and the implant profile peaking at the interface. Samples were subjected to thermal annealing and characterized by ERD, FTIR, RBS/channeling, UV/VIS reflectance and cathodoluminescence regarding H-content, crystalline quality a