The effect of crystal orientation on thermal shock-induced fracture and properties of ion implanted sapphire
โ Scribed by V.N. Gurarie; P.H. Otsuka; D.N. Jamieson; J.S. Williams; M. Conway
- Book ID
- 114165512
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 186 KB
- Volume
- 190
- Category
- Article
- ISSN
- 0168-583X
No coin nor oath required. For personal study only.
๐ SIMILAR VOLUMES
This paper studies the effect of anisotropy on the response of an R-plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the temperature and stress distribution in the wafer when the environment was heated from room temperature to 800 โข C, and then cooled do
ZnO thin films on sapphire substrate were fabricated by ion implantation combined with thermal oxidation. A sapphire substrate was implanted with 50 keV zinc ions at 350 ยฐC with a fluence of 1.5 ร 10 17 ions cm ร2 , then annealed in a tube furnace in oxygen ambient in 2 h at 650 ยฐC. Photoluminescenc