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Electrical properties of silicon layers implanted with ytterbium ions

✍ Scribed by O. V. Aleksandrov; A. O. Zakhar’in; N. A. Sobolev

Book ID
110129444
Publisher
Springer
Year
2002
Tongue
English
Weight
58 KB
Volume
36
Category
Article
ISSN
1063-7826

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The Jormation of amorphous zones in thin heteroepitaxial layers" of silicon has been investigated by optical transmission spectroscopy' with ion species, dose, intensity and irradiation temperature as the main parameters. The dependence of the recrystallization of the irradiated layers on annealing