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Electrical Properties of Alumina Films by Plasma-Enhanced Atomic Layer Deposition

✍ Scribed by Lim, Jung Wook; Yun, Sun Jin

Book ID
121656753
Publisher
The Electrochemical Society
Year
2004
Tongue
English
Weight
330 KB
Volume
7
Category
Article
ISSN
1099-0062

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Structural properties of AlN films depos
Structural properties of AlN films deposited by plasma-enhanced atomic layer deposition at different growth temperatures
✍ Alevli, Mustafa ;Ozgit, Cagla ;Donmez, Inci ;Biyikli, Necmi πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 748 KB

## Abstract Crystalline aluminum nitride (AlN) films have been prepared by plasma‐enhanced atomic layer deposition (PEALD) within the temperature range from 100 to 500 °C. A self‐limiting, constant growth rate per cycle temperature window (100–200 °C) was established which is the major characterist