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Electrical properties and microstructure of ternary Ge/Ti/Al ohmic contacts to p-type 4H–SiC

✍ Scribed by Tsukimoto, S.; Sakai, T.; Murakami, Masanori


Book ID
111909942
Publisher
American Institute of Physics
Year
2004
Tongue
English
Weight
871 KB
Volume
96
Category
Article
ISSN
0021-8979

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## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 × 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele