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Electrical characteristics and structural properties of ohmic contacts top-type 4H-SiC epitaxial layers

✍ Scribed by K. V. Vasilevskii; S. V. Rendakova; I. P. Nikitina; A. I. Babanin; A. N. Andreev; K. Zekentes

No coin nor oath required. For personal study only.

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