✦ LIBER ✦
Heavily Aluminum-Doped Epitaxial Layers for Ohmic Contact Formation top-Type 4H-SiC Produced by Low-Temperature Homoepitaxial Growth
✍ Scribed by B. Krishnan; S.P. Kotamraju; G. Melnychuk; H. Das; J. N. Merrett; Y. Koshka
- Book ID
- 107455651
- Publisher
- Springer US
- Year
- 2009
- Tongue
- English
- Weight
- 288 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0361-5235
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