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Electrical and structural properties of low-resistance Ti/Al/Re/Au ohmic contacts to n-type GaN

✍ Scribed by V. Reddy; Sang-Ho Kim; Tae-Yeon Seong

Book ID
107453234
Publisher
Springer US
Year
2004
Tongue
English
Weight
136 KB
Volume
33
Category
Article
ISSN
0361-5235

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Electrical and microstructural propertie
Electrical and microstructural properties of low-resistance Ti/Re/Au ohmic contacts to n-type GaN
✍ Rajagopal Reddy, V. ;Choi, Chel-Jong πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 473 KB

## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 Γ— 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele