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Low resistivity ohmic contact to n-type poly-GaN using a Ti/Au/Ni/Au multilayer metal system

✍ Scribed by Wu-Yih Uen; Zhen-Yu Li; Shan-Ming Lan; Tsun-Neng Yang; Yen-Wen Chen; Sen-Mao Liao


Book ID
108271571
Publisher
Elsevier Science
Year
2007
Tongue
English
Weight
513 KB
Volume
51
Category
Article
ISSN
0038-1101

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Electrical and microstructural propertie
✍ Rajagopal Reddy, V. ;Choi, Chel-Jong πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 473 KB

## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 Γ— 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele