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Thermally stable and low-resistance W/Ti/Au contacts to n-type GaN

✍ Scribed by V. Rajagopal Reddy; Sang-Ho Kim; Hyun-Gi Hong; Sang-Won Yoon; Jae-Pyoung Ahn; Tae-Yeon Seong


Book ID
106398055
Publisher
Springer US
Year
2008
Tongue
English
Weight
377 KB
Volume
20
Category
Article
ISSN
0957-4522

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Electrical and microstructural propertie
✍ Rajagopal Reddy, V. ;Choi, Chel-Jong πŸ“‚ Article πŸ“… 2007 πŸ› John Wiley and Sons 🌐 English βš– 473 KB

## Abstract The microstructural and electrical properties of Ti/Re/Au (10 nm/10 nm/50 nm) ohmic contacts to moderately doped n‐type GaN (4.0 Γ— 10^18^ cm^–3^) have been investigated by current–voltage (__I__ –__V__), Auger electron microscopy (AES) and transmission electron microscopy (TEM). The ele