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Simultaneous formation of p- and n-type ohmic contacts to 4H-SiC using the ternary Ni/Ti/Al system

✍ Scribed by S. Tsukimoto; T. Sakai; T. Onishi; Kazuhiro Ito; Masanori Murakami

Book ID: 107453504
Publisher: Springer US
Year: 2005
Tongue: English
Weight: 61 KB
Volume: 34
Category: Article
ISSN: 0361-5235
DOI: 10.1007/s11664-005-0255-6

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Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence