✦ LIBER ✦
A common metallization scheme for ohmic contacts to n-type and p-type GaAs: the AlNiSn system
✍ Scribed by Krishnamachar Prasad
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 250 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Results are presented on the use of A1-Ni-Sn metallization system as a common metallization scheme to realize ohmic contacts to both p-type and n-type GaAs. The ohmic contacts yield a specific contact resistance in the range from 10 --~ to 10 -4 if2 cm 2 for both p-type and n-type GaAs. The presence of a cap during the annealing step brings about a significant reduction in the specific contact resistance. The surface morphology of the contacts is smooth and uniform unlike the usually rough and uneven surface morphology of the (Au-Ge)/Ni ohmic contacts to n-GaAs.