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Electrical defects introduced during high-temperature irradiation of GaN and AlGaN

✍ Scribed by M. Hayes; F.D. Auret; L. Wu; W.E. Meyer; J.M. Nel; M.J. Legodi

Book ID
103884728
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
211 KB
Volume
340-342
Category
Article
ISSN
0921-4526

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera