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Effects of SiH2Cl2 on low-temperature (≤200°C) Si epitaxy by photochemical vapor deposition

✍ Scribed by Takayuki Oshima; Masashi Sano; Akira Yamada; Makoto Konagai; Kiyoshi Takahashi

Book ID: 103617729
Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 284 KB
Volume: 79-80
Category: Article
ISSN: 0169-4332
DOI: 10.1016/0169-4332(94)90412-x

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