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The role of antiphase domain boundaries in Si epitaxy by ultrahigh vacuum chemical vapor deposition from SiH 4 or SiH 2 Cl 2 on Si(100)-(2×1)

✍ Scribed by Spitzmüller, J.; Fehrenbacher, M.; Haug, F.; Rauscher, H.; Behm, R.J.


Book ID
113035398
Publisher
Springer
Year
1998
Tongue
English
Weight
460 KB
Volume
66
Category
Article
ISSN
1432-0630

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