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Effects of Mg doping on the gate bias and thermal stability of solution-processed InGaZnO thin-film transistors

✍ Scribed by Su, Bo-Yuan; Chu, Sheng-Yuan; Juang, Yung-Der; Liu, Ssu-Yin

Book ID
121812069
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
1002 KB
Volume
580
Category
Article
ISSN
0925-8388

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## Abstract We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger ch