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Influence of thermal parameter on solution-processed Zr-doped ZTO thin-film transistors

✍ Scribed by You Seung Rim; Dong Lim Kim; Woong Hee Jeong; Si Joon Kim; Bo Sung Kim; Hyun Jae Kim


Book ID
108079423
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
741 KB
Volume
11
Category
Article
ISSN
1567-1739

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## Abstract We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger ch