Electrical characteristics of solution-processed InGaZnO thin film transistors depending on Ga concentration

✍ Scribed by Kim, Gun Hee ;Jeong, Woong Hee ;Kim, Hyun Jae

• Publisher: John Wiley and Sons
• Year: 2010
• Tongue: English
• Weight: 242 KB
• Volume: 207
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200983742

✦ Synopsis

Abstract

We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger chemical bonds with oxygen, as compared to the Zn and In ions, acting as a carrier suppressor. It was verified, using X‐ray photoelectron spectroscopy (XPS), that the vacancy‐related oxygen 1s peak was decreased when the Ga content increased.