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Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol–gel process

✍ Scribed by Jun Hyuk Choi; Soo Min Hwang; Chang Min Lee; Ji Cheol Kim; Geun Chul Park; Jinho Joo; Jun Hyung Lim

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 287 KB
Volume: 326
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.01.091

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