InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio
β¦ LIBER β¦
Effect of reactive sputtered SiOx passivation layer on the stability of InGaZnO thin film transistors
β Scribed by Jun Li; Fan Zhou; Hua-Ping Lin; Wen-Qing Zhu; Jian-Hua Zhang; Xue-Yin Jiang; Zhi-Lin Zhang
- Book ID
- 116965155
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 541 KB
- Volume
- 86
- Category
- Article
- ISSN
- 0042-207X
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