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RF Power Effect on the Properties of Sputtered ZnO Films for Channel Layer Applications in Thin-Film Transistors

✍ Scribed by M.I. Medina-Montes, H. Arizpe-Chávez, L.A. Baldenegro-Pérez, M.A. Quevedo-López, R. Ramírez-Bon

Book ID
113087335
Publisher
Springer US
Year
2012
Tongue
English
Weight
804 KB
Volume
41
Category
Article
ISSN
0361-5235

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐