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Effect of rf power on the properties of rf magnetron sputtered ZnO:Al thin films

✍ Scribed by M. Saad; A. Kassis


Book ID
119322254
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
400 KB
Volume
136
Category
Article
ISSN
0254-0584

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Influence of RF power on the properties
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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐