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Influence of sputtering power on properties of ZnO thin films fabricated by RF sputtering in room temperature

✍ Scribed by DeDong Han; Yi Wang; ShengDong Zhang; Lei Sun; RuQi Han; Satoru Matsumoto; Yuji Ino

Book ID
115499712
Publisher
Science in China Press (SCP)
Year
2011
Tongue
English
Weight
313 KB
Volume
55
Category
Article
ISSN
1674-733X

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## Abstract Transparent conducting, aluminium doped zinc oxide thin films (ZnO:Al) were deposited by radio frequency (RF) magnetron sputtering. The RF power was varied from 60 to 350 W whereas the substrate temperature was kept at 160 °C. The structural, electrical and optical properties of the as‐