The effects of buffer layers on the performance and stability of flexible InGaZnO thin film transistors on polyimide substrates
β Scribed by Ok, Kyung-Chul; Ko Park, Sang-Hee; Hwang, Chi-Sun; Kim, H.; Soo Shin, Hyun; Bae, Jonguk; Park, Jin-Seong
- Book ID
- 121702168
- Publisher
- American Institute of Physics
- Year
- 2014
- Tongue
- English
- Weight
- 891 KB
- Volume
- 104
- Category
- Article
- ISSN
- 0003-6951
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π SIMILAR VOLUMES
InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio
The crack onset strain (COS) of 4-level thin film transistor (TFT) devices on both steel foils and thin polyimide (PI) films was investigated using tensile experiments carried out in situ in an optical microscope. Cracks initiated first within the SiO 2 insulator layer for both types of substrates.