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The effects of a combined thermal treatment of substrate heating and post-annealing on the microstructure of InGaZnO films and the device performance of their thin film transistors

โœ Scribed by Mi Ran Moon; Sekwon Na; Haseok Jeon; Tae Hun Lee; Donggeun Jung; Hyoungsub Kim; Jun-Mo Yang; Hoo-Jeong Lee

Book ID
112206800
Publisher
John Wiley and Sons
Year
2012
Tongue
English
Weight
652 KB
Volume
44
Category
Article
ISSN
0142-2421

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Effects of the thickness of the channel
Effects of the thickness of the channel layer on the device performance of InGaZnO thin-film-transistors
โœ C.H. Woo; Y.Y. Kim; B.H. Kong; H.K. Cho ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 712 KB

InGaZnO thin-film-transistors (TFTs) with various channel thicknesses were fabricated with a bottom gate configuration on SiO 2 /p-Si substrates at room temperature by radio frequency magnetron sputtering. The thickness of the InGaZnO channel layer ranged from 20 to 200 nm and the width/length ratio