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H2 annealing effect on the structural and electrical properties of amorphous InGaZnO films for thin film transistors

✍ Scribed by Li, Yuanjie; Liu, Zilong; Jiang, Kai; Hu, Xiaofen

Book ID
121789899
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
975 KB
Volume
378
Category
Article
ISSN
0022-3093

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## Abstract The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This w