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Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors

✍ Scribed by Shin, Hyun Soo ;Rim, You Seung ;Mo, Yeon-Gon ;Choi, Chaun Gi ;Kim, Hyun Jae

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
335 KB
Volume
208
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The effects of high‐pressure annealing were investigated using amorphous InGaZnO (a‐IGZO) thin‐film transistors (TFTs). The fabricated device annealed at 5 atm in H~2~O ambient showed the best electrical characteristics and stability under positive bias temperature stress (PBTS). This was attributed to mainly a reduction in the band bending at the overlap between the source–drain (S/D) electrodes and the etch stop layer (ESL). This is originated from the recovery of charge‐trapping sites at in‐ and bottom‐ESLs due to defect passivation with the aid of high‐pressure thermal annealing at 5 atm in H~2~O ambient.

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