Structural and electrical characteristics of high-κ ErTixOy gate dielectrics on InGaZnO thin-film transistors
✍ Scribed by Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Li, Wei-Chen; Matsuda, Yasuhiro H.; Pan, Tung-Ming
- Book ID
- 122906999
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 929 KB
- Volume
- 539
- Category
- Article
- ISSN
- 0040-6090
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## Abstract We investigated the role of Ga in solution‐processed InGaZnO thin film transistors (TFTs). The incorporation of Ga into a InZnO compound system results in a decrease in the carrier concentration of the films and an off‐current of TFTs. This is a result of the Ga ions forming stronger ch
High j HfO x N y film was deposited on amorphous InGaZnO (a-IGZO) by radio-frequency reactive sputtering using an HfO 2 target in nitrogen plus argon ambience, the electrical characteristics and reliability of a-IGZO metal-insulator-semiconductor (MIS) capacitors were investigated. Experimental resu