Effect of growth conditions on the condu
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Simon, John ;Jena, Debdeep
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Article
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2008
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John Wiley and Sons
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English
β 439 KB
## Abstract The performance of IIIβV nitride heterostructure bipolar transistors has been limited by highly resistive pβtype layers, in addition to difficulties associated with a precise pβn junction placement at the emitterβbase heterojunction due to the Mgβmemory effect during growth by MetalβOrg