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Thermal Annealing Effects on P-Type Mg-Doped GaN Films

✍ Scribed by Nakamura, Shuji; Mukai, Takashi; Senoh, Masayuki; Iwasa, Naruhito

Book ID: 118023327
Publisher: Institute of Pure and Applied Physics
Year: 1992
Tongue: English
Weight: 569 KB
Volume: 31
Category: Article
ISSN: 0021-4922
DOI: 10.1143/jjap.31.l139

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## Abstract The performance of III–V nitride heterostructure bipolar transistors has been limited by highly resistive p‐type layers, in addition to difficulties associated with a precise p–n junction placement at the emitter‐base heterojunction due to the Mg‐memory effect during growth by Metal‐Org