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Effect of rapid thermal annealing on beryllium implanted p-type GaN

✍ Scribed by Hung Wen Huang; C.C Kao; J.Y Tsai; C.C Yu; C.F Chu; J.Y Lee; S.Y Kuo; C.F Lin; H.C Kuo; S.C Wang

Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
127 KB
Volume
107
Category
Article
ISSN
0921-5107

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We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing procedure (950 β€’ C for 30 s). The photolumine