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Effects of thermal annealing on the properties of GaN MSM UV photodetectors

✍ Scribed by Man Zhao; Jinhe Bao; Xiuying Fan; Feng Gu; Yongsheng Guo; Yong Zhang; Mei Zhao; Yufang Sha; Fei Guo; Jian Li

Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
490 KB
Volume
404
Category
Article
ISSN
0921-4526

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πŸ“œ SIMILAR VOLUMES

Effect of AlN film thickness on photo/da
Effect of AlN film thickness on photo/dark currents of MSM UV photodetector
✍ Ru-Yuan Yang; Chin-Min Hsiung; Hsuan-Hsu Chen; Hung-Wei Wu; Ming-Chang Shih πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 378 KB

## Abstract In this article, we have successfully fabricated the metal‐semi‐conductor‐metal (MSM) UV photodetector using the aluminum nitride‐based (AlN) film as an active layer grown on p‐type Si (100) by a dc sputtering deposition. Effect of AlN thickness of 500, 1500, and 2500 nm on the surface