✦ LIBER ✦

Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

✍ Scribed by Gotz, W.; Johnson, N. M.; Walker, J.; Bour, D. P.; Street, R. A.

Book ID: 118023053
Publisher: American Institute of Physics
Year: 1996
Tongue: English
Weight: 368 KB
Volume: 68
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.116503

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Hydrogen passivation of Mg acceptors in

Hydrogen passivation of Mg acceptors in GaN grown by metalorganic chemical vapor deposition

✍ W. Götz; N. M. Johnson; J. Walker; D. P. Bour; H. Amano; I. Akasaki 📂 Article 📅 1995 🏛 American Institute of Physics 🌐 English ⚖ 252 KB

p-type conduction in as-grown Mg-doped G

p-type conduction in as-grown Mg-doped GaN grown by metalorganic chemical vapor deposition

✍ Sugiura, Lisa; Suzuki, Mariko; Nishio, Johji 📂 Article 📅 1998 🏛 American Institute of Physics 🌐 English ⚖ 290 KB

GaN homoepitaxial layers grown by metalo

GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

✍ Leszczynski, M.; Beaumont, B.; Frayssinet, E.; Knap, W.; Prystawko, P.; Suski, T 📂 Article 📅 1999 🏛 American Institute of Physics 🌐 English ⚖ 291 KB

Photoluminescence study of acceptors in

Photoluminescence study of acceptors in silicon-doped gallium arsenide grown by metalorganic chemical vapor deposition

✍ T. Lideikis; G. Treideris 📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 439 KB

Red emission from Eu-doped GaN luminesce

Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition

✍ Pan, M.; Steckl, A. J. 📂 Article 📅 2003 🏛 American Institute of Physics 🌐 English ⚖ 364 KB

Characterization of AlGaN/GaN Heterostru

Characterization of AlGaN/GaN Heterostructures Grown by Metalorganic Chemical Vapor Deposition

✍ C.J. Eiting; D.J.H. Lambert; H.K. Kwon; B.S. Shelton; M.M. Wong; T.G. Zhu; R.D. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 144 KB 👁 2 views