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MOVPE growth and characterization of Mg-doped GaN

✍ Scribed by P Kozodoy; S Keller; S.P DenBaars; U.K Mishra


Book ID
108342840
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
83 KB
Volume
195
Category
Article
ISSN
0022-0248

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## Abstract This paper reports on the growth of Cr‐doped GaN layers by metal organic vapor phase epitaxy (MOVPE) and their characterization for possible spintronic applications. We have used bis (cyclopentadienyl)chromium (Cp~2~Cr) to intentionally incorporate chromium (Cr) during GaN layer growth.

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