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MOVPE growth, optical and electrical characterization of thick Mg-doped InGaN layers

✍ Scribed by Tuna, Ö.; Hahn, H.; Kalisch, H.; Giesen, C.; Vescan, A.; Rzheutski, M.V.; Pavlovskii, V.N.; Lutsenko, E.V.; Yablonskii, G.P.; Heuken, M.

Book ID
120359460
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
814 KB
Volume
370
Category
Article
ISSN
0022-0248

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We have grown \(\mathrm{ZnSe} / \mathrm{ZnS}\) superlattices using low pressure MOVPE. The superlattices were grown onto a relaxed \(\mathrm{ZnSe}\) buffer and were constituted of 45 periods. The well and barrier thicknesses were chosen from the calculation of critical thicknesses for coherent and f