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Growth and characterization of thick GaN layers with high Fe doping

✍ Scribed by Y. Kumagai; H. Murakami; Y. Kangawa; A. Koukitu

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
203 KB
Volume
2
Category
Article
ISSN
1862-6351

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## Abstract The crystallographic structures of the various Metalorganic Vapour Phase Epitaxy (MOVPE) thin GaN epitaxial layers deposited on (00.1) sapphire substrates are described and compared with the structural properties of the thick gallium nitride layers deposited by Hydride Vapour Phase Epit